Growth of CuPc thin films on structured SiO2/Si(100) studied by metastable electron emission microscopy and photoelectron emission microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 6 A, 2003, Pages 3588-3592

  Onoue, Miki ^a   Ibe, Takahiro ^a   Miyauchi, Jun ^a   Shionoiri, Masakazu ^a   Abdureym, Abduaini ^b   Kera, Satoshi ^a   Okudaira, Kouji K ^a,c   Harada, Yoshiya ^d   Ueno, Nobuo ^a  

^a CHIBA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

^d SEITOKU UNIVERSITY   (Japan)

Author keywords

Electron emission microscopy; Growth of organic thin film; Image contrast change; Molecular orientation; Topographical surface

Indexed keywords

DEPOSITION; ELECTRON SPECTROSCOPY; ENERGY GAP; FILM GROWTH; LITHOGRAPHY; MOLECULAR ORIENTATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON; SILICA; SURFACE TOPOGRAPHY; SURFACE TREATMENT; THIN FILMS;

IMAGE CONTRAST CHANGE; METASTABLE ELECTRON EMISSION MICROSCOPY; PHOTOELECTRON EMISSION MICROSCOPY; SURFACE SENSITIVITIES;

COPPER COMPOUNDS;

EID: 0042238463     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.3588     Document Type: Article

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