Contribution of ions and radicals in etching of Si1-xGex epitaxial films using an electron-cyclotron-resonance chlorine plasma

Applied Physics Letters

Volumn 77, Issue 12, 2000, Pages 1828-1830

  Takeuchi, Hajime ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042227745     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1310624     Document Type: Article

References (13)

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