Atomic-layer surface reaction of chlorine on Si and Ge assisted by an ultraclean ECR plasma

Surface Science

Volumn 402-404, Issue , 1998, Pages 202-205

  Matsuura, T ^a   Sugiyama, T ^a   Murota, J ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Atom solid reactions; Electron bombardment; Germanium; Halogens; Ion etching; Plasma processing; Silicon

Indexed keywords

ADSORPTION; ANNEALING; ARGON; CHLORINE; CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; ETCHING; ION BOMBARDMENT; PLASMA APPLICATIONS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON BOMBARDMENT; ION ETCHING;

SURFACE PHENOMENA;

EID: 0031622454     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00994-1     Document Type: Article

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