CVD Si1-xGex epitaxial growth its application to MOS devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3881, Issue , 1999, Pages 33-45

  Murota, Junichi ^a   Sakuraba, Masao ^a   Matsuura, Takashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MOS DEVICES; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SURFACE ROUGHNESS;

FIELD EFFECT MOBILITY; GERMANIUM FRACTIONS; LANGMUIR TYPE ADSORPTION; LOW PRESSURE CVD;

HETEROJUNCTIONS;

EID: 0033343827     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (35)