Indium clustering in a silicon matrix in the presence of carbon co-implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 209, Issue , 2003, Pages 136-139

  Gennaro, S ^a   Collart, E ^b   Wang, Y ^a   Sealy, B J ^a   Gwilliam, R M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Applied Materials UK Ltd   (United Kingdom)

Author keywords

Defects; Doping; Indium; Ion implantation

Indexed keywords

CARBON; DOPING (ADDITIVES); INDIUM; SILICON; SOLUBILITY; SUBSTITUTION REACTIONS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM CLUSTERING;

ION IMPLANTATION;

EID: 0042031009     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00513-5     Document Type: Conference Paper

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