Structural and electrical properties of p+ n junctions in Si by low energy Ga+ implantation

Journal of Applied Physics

Volumn 82, Issue 10, 1997, Pages 4990-4993

  Parry, C P ^a   Whall, T E ^a   Parker, E H C ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; ANNEAL TIME; DIODE CURRENTS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; EQUILIBRIUM SOLUBILITIES; HIGH RESOLUTION; IDEALITY FACTORS; IMPLANTED JUNCTIONS; JUNCTION AREA; LOW ENERGIES; MOLECULAR SPECIES; POST-ANNEAL; PRE-AMORPHIZATION; PROFILE BROADENING; PROFILE CONTROL; RECTIFICATION BEHAVIOR; REVERSE ANNEALING; REVERSE BIAS; SECONDARY ION MASS SPECTROSCOPY; STRAINED-SI; STRUCTURAL AND ELECTRICAL PROPERTIES; ULTRA-SHALLOW P;

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; SECONDARY ION MASS SPECTROMETRY; SILICON;

ELECTRIC PROPERTIES;

EID: 0041783809     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366367     Document Type: Article

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