Use of indium and gallium as P-type dopants in Si 0.1 μm MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1037-1040

  Biesemans, Serge ^a   Kubicek, Stefan ^a   De Meyer, Kristin ^a  

^a IMEC   (Belgium)

Author keywords

Gallium; Indium; Retrograde channel profile; Shallow junctions; Short channel effect

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SUBSTRATES;

CHANNEL DOPANTS; LONG CHANNEL THRESHOLD VOLTAGE; RETROGRADE CHANNEL PROFILE; SHALLOW JUNCTIONS; SHORT CHANNEL EFFECT;

MOSFET DEVICES;

EID: 0030078857     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1037     Document Type: Article

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