Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 312-315

  Saint Eve, F ^a   Lefebvre, S ^a   Khatir, Z ^b  

^a Bioinformatique et Chimie Moléculaire   (France)

^b INRETS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC BREAKDOWN; ENERGY DISSIPATION; GATES (TRANSISTOR); INDUCTANCE; INSULATED GATE BIPOLAR TRANSISTORS; SHORT CIRCUIT CURRENTS;

INDUCTIVE LOADS;

CMOS INTEGRATED CIRCUITS;

EID: 0042014507     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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