Power superjunction devices: An analytic model for breakdown voltage

Microelectronics Journal

Volumn 32, Issue 5-6, 2001, Pages 491-496

  Strollo, A G M ^a   Napoli, E ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Analytical model; Breakdown voltage; Superjunction devices

Indexed keywords

APPROXIMATION THEORY; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

POWER SUPERJUNCTION DEVICES;

SEMICONDUCTOR JUNCTIONS;

EID: 0035335682     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00020-9     Document Type: Article

References (14)

1. Simulated superior performances of semiconductor superjunction devices
2. Properties of CoolMOS between 420 and 80 K - The ideal device for cryogenic applications
3. CoolMOS - A new milestone in high voltage power MOS
4. CoolMOS - A new approach toward an idealized power switch
5. Switching properties of the CoolMOS transistor
6. Analysis of the effect of charge imbalance on the static and dynamic characteristic of the super junction MOSFET
7. Predicted electrical characteristics of 4500 V super multi-resurf MOSFETs
8. Theory of semiconductor superjunction devices
9. A new generation of high voltage MOSFETs breaks the limit line of silicon