Absorption coefficient of oxide precipitates in silicon wafers after different three-step annealing

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 247-250

  Sassella, A ^a   Borghesi, A ^a   Geranzani, P ^b   Olmo, M ^b   Porrini, M ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b MEMC Electronic Materials SpA   (Italy)

^c MEMC Electronic Materials SpA   (Italy)

Author keywords

Crystalline silicon; Infrared absorption; Oxygen precipitation

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; ELECTROMAGNETIC WAVE ABSORPTION; INFRARED RADIATION; PRECIPITATION (CHEMICAL);

INTERSTITIAL OXYGEN;

SILICON WAFERS;

EID: 0041930983     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00740-7     Document Type: Conference Paper

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