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Volumn 79, Issue 26, 2001, Pages 4339-4341

Measurement of interstitial oxygen concentration in silicon below 1015 atoms/cm3

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035945204     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1429293     Document Type: Article
Times cited : (8)

References (11)
  • 1
    • 0003371040 scopus 로고
    • Oxygen in Silicon
    • edited by Academic, San Diego
    • Oxygen in Silicon, edited by F. Shimura, Semiconductors and Semimetals, Vol. 42 (Academic, San Diego, 1994).
    • (1994) Semiconductors and Semimetals , vol.42
    • Shimura, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.