A complete study of SILC effects on E2PROM reliability

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 437-438

  Larcher, L ^a   Bertulu, S ^a   Pavan, P ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Bars; Degradation; Leakage current; Nonvolatile memory; Physics; PROM; Random access memory; Temperature; Threshold voltage; Virtual manufacturing

Indexed keywords

AGILE MANUFACTURING SYSTEMS; BARS (METAL); DEGRADATION; LEAKAGE CURRENTS; PHYSICS; RANDOM ACCESS STORAGE; RELIABILITY; TEMPERATURE; THRESHOLD VOLTAGE;

NON-VOLATILE MEMORY; OXIDE THICKNESS SCALING; PROGRAM/ERASE; RANDOM ACCESS MEMORY; RETENTION PROPERTIES; STORAGE FIELDS; TEST STRUCTURE; VIRTUAL MANUFACTURING;

PROM;

EID: 0041893003     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996684     Document Type: Conference Paper

References (5)

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