Non-quasi-static (NQS) thermal noise modeling of the MOS transistor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5113, Issue , 2003, Pages 78-92

  Porret, Alain Serge ^a   Enz, Christian C ^b,c  

^a Xceive Corporation   (United States)

^b CSEM   (Switzerland)

^c EPFL   (Switzerland)

Author keywords

NQS; RF MOS transistor model; Thermal noise

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; THERMAL NOISE;

INDUCED GATE NOISE; NOISE FIGURE; NON-QUASI-STATIC THERMAL NOISE;

MOSFET DEVICES;

EID: 0041823678     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.488835     Document Type: Conference Paper

References (13)

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