Characterization of the CH4/H2/Ar high density plasma etch process for HgCdTe

Materials Research Society Symposium - Proceedings

Volumn 450, Issue , 1997, Pages 275-280

  Eddy Jr , C R ^a   Leonhardt, D ^a   Shamamian, V A ^a   Holm, R T ^a   Glembocki, O J ^a   Meyer, J R ^a   Hoffman, C A ^a   Butler, J E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MASS SPECTROMETRY; MERCURY COMPOUNDS; METHANE; PLASMA ETCHING; PRESSURE EFFECTS; THERMAL EFFECTS;

FLOW FRACTIONS; ION ENERGIES; MERCURY CADMIUM TELLURIDE (HGCDTE); RESIDUAL DAMAGES;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0030677512     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)