Spectral shape analysis of photoluminescence excitation in semiconductors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 120-123

  Warashina, Masatoshi ^a   Tajima, Michio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Minority carrier; Photoluminescence; Photoluminescence excitation; Surface recombination velocity

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; CRYSTALS; ENERGY GAP; LIGHT ABSORPTION; PHOTOLUMINESCENCE; PHOTONS; SPECTRUM ANALYSIS;

BANDGAP ENERGY; CARRIER CONTINUITY EQUATION; MINORITY CARRIER; PHOTOLUMINESCENCE EXCITATION; SEMICONDUCTOR CRYSTALS; SPECTRAL SHAPE ANALYSIS; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTOR MATERIALS;

EID: 0029754434     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.120     Document Type: Article

References (6)

1. G. Duggan and G. B. Scott: J. Appl. Phys. 52 (1981) 407.
2. J. Vilms and W. E. Spicer: Phys. Rev. 36 (1965) 2815.
3. W. Williams and R. A. Chapman: J. Appl. Phys. 38 (1967) 2547.
4. H. Barry Bebb and E. W. Williams: Semiconductors and Semimetals, eds. R. K. Willardson and A. C. Beer (Academic Press, New York and London, 1972) Vol. 8, Chap. 4, p. 223.
5. M. Tajima: Jpn. J. Appl. Phys. 27 (1988) L1323.
6. O. Kimoto, M. Tajima, K. Terashima, M. Warashina and A. Nakamura: Ext. Abstr. 55th Autumn Meet. Japan Society of Applied Physics, Nagoya, September, 20a-ZA6 [in Japanese].