Characterization of silicon-on-insulator wafers by photoluminescence decay lifetime measurement

Japanese journal of applied physics

Volumn 39, Issue 11 B, 2000, Pages

  Ibuka, Shigeo ^a   Tajima, Michio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL STRUCTURE; PHOTOLUMINESCENCE; SILICON ON INSULATOR TECHNOLOGY; ULTRAVIOLET RADIATION;

ELECTRON-HOLE DROPLETS (EHD);

SILICON WAFERS;

EID: 0034315963     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1124     Document Type: Article

References (12)

1. M. Tajima, S. Ibuka, H. Aga and T. Abe: Appl. Phys. Lett. 70 (1997) 231.
2. S. Ibuka, M. Tajima, M. Saito, J. Jablonski, M. Warashina and K. Nagasaka: Jpn. J. Appl. Phys. 37 (1998) 141.
3. M. Tajima, A. Ogura, T. Karasawa and A. Mizoguchi: Jpn. J. Appl. Phys. 37 (1998) L1199.
4. S. Ibuka and M. Tajima: Proc. 7th Int. Conf. Defect Recognition & Image Processing in Semiconductors, Germany, 1997, eds. J. Donecker and I. Rechenberg (Inst. Phys. Publishing, Bristol, 1889) pp. 111-114.
5. M. Tajima and S. Ibuka: J. Appl. Phys. 84 (1998) 2224.
6. G. E. Jellison, Jr. and F. A. Modine: J. Appl. Phys. 53 (1982) 3745.
7. N. A. Drozdov, A. A. Patrin and V. D. Tkachev: Phys. Status Solidi (b)79 (1977) K137.
8. M. Tajima and Y. Matsushita: Jpn. J. Appl. Phys. 22 (1983) L589.
9. Y. Pokrovkii: Phys. Status Solidi 11 (1972) 385.
10. D. Bimberg: Landolt-Börnstein, eds. O. Madelung, M. Schulz and H. Weiss (Springer-Verlag Berlin, Heidelberg, 1987) Vol. III/17i, p. 297.
11. G. Davies: Phys. Rep. 176 (1989) 83.
12. R. J. Davis, H. U. Habermeier and J. Weber: Appl. Phys. Lett. 47 (1985) 1295.