Thermal activation of the crystallization kinetics of amorphous silicon

Materials Research Society Symposium - Proceedings

Volumn 398, Issue , 1996, Pages 387-392

  Mohammed Brahim, T ^a   Briand, D ^a   Kis Sion, K ^a   Guillet, D ^a   Salaun, A C ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DOPING (ADDITIVES); INTERFACES (MATERIALS); REACTION KINETICS;

AMORPHOUS SILICON FILM; FILM CONDUCTANCE; IN SITU MONITORING; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; SOLID PHASE CRYSTALLIZATION; THERMAL ACTIVATION;

CRYSTALLIZATION;

EID: 0029765993     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)