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Volumn 47, Issue 10, 2003, Pages 1787-1791

Electrical characteristics of a-SiGe:H thin-film transistors with Sb/Al binary alloy Schottky source/drain contact

Author keywords

Amorphous thin films; Metal alloys; Schottky contact

Indexed keywords

BINARY ALLOYS; ELECTRON MOBILITY; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS;

EID: 0041592432     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00160-6     Document Type: Conference Paper
Times cited : (6)

References (9)
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  • 4
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    • Sub-40 nm Pt-Si Schottky source/drain metal-oxide-semiconductor field-effect transistors
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  • 5
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    • Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts
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    • A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs
    • Zhao Q.T., Klinkhammer F., Dolle M., Kappius L., Mantal S. A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs. Microelectronic Eng. 50:2000;133-138.
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    • Polycrystalline silicon-germanium thin-film transistors
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  • 8
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    • Improving contact performances of Al (Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer
    • Lin C.S., Yeh R.H., Li I.X., Hong J.W. Improving contact performances of Al (Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer. IEEE Electron. Lett. 38:2002;253-255.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.