-
2
-
-
0030241868
-
High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD material
-
Chen C.Y., Kanicki J. High field-effect-mobility a-Si:H TFT based on high deposition-rate PECVD material. IEEE Electron Dev. Lett. 17:1996;437-439.
-
(1996)
IEEE Electron Dev. Lett.
, vol.17
, pp. 437-439
-
-
Chen, C.Y.1
Kanicki, J.2
-
3
-
-
0026123828
-
Amorphous-silicon thin-film transistors with very high field-effect mobility
-
Lin J.L., Sah W.J., Lee S.C. Amorphous-silicon thin-film transistors with very high field-effect mobility. IEEE Electron Dev. Lett. 12:1991;120-121.
-
(1991)
IEEE Electron Dev. Lett.
, vol.12
, pp. 120-121
-
-
Lin, J.L.1
Sah, W.J.2
Lee, S.C.3
-
4
-
-
0033593712
-
Sub-40 nm Pt-Si Schottky source/drain metal-oxide-semiconductor field-effect transistors
-
Wang C., Snyder J.P., Tucker J.R. Sub-40 nm Pt-Si Schottky source/drain metal-oxide-semiconductor field-effect transistors. Appl. Phys. Lett. 74:1999;1174.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1174
-
-
Wang, C.1
Snyder, J.P.2
Tucker, J.R.3
-
5
-
-
0000754750
-
Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts
-
Nishika M., Asano T. Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts. Jpn. J. Appl. Phys. 37:1998;1295.
-
(1998)
Jpn. J. Appl. Phys.
, vol.37
, pp. 1295
-
-
Nishika, M.1
Asano, T.2
-
6
-
-
0033640067
-
A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs
-
Zhao Q.T., Klinkhammer F., Dolle M., Kappius L., Mantal S. A novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs. Microelectronic Eng. 50:2000;133-138.
-
(2000)
Microelectronic Eng.
, vol.50
, pp. 133-138
-
-
Zhao, Q.T.1
Klinkhammer, F.2
Dolle, M.3
Kappius, L.4
Mantal, S.5
-
7
-
-
0028514701
-
Polycrystalline silicon-germanium thin-film transistors
-
King T.J., Saraswat K.C. Polycrystalline silicon-germanium thin-film transistors. IEEE Trans. Electron Dev. 41:1994;1581-1591.
-
(1994)
IEEE Trans. Electron Dev.
, vol.41
, pp. 1581-1591
-
-
King, T.J.1
Saraswat, K.C.2
-
8
-
-
0037186010
-
Improving contact performances of Al (Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer
-
Lin C.S., Yeh R.H., Li I.X., Hong J.W. Improving contact performances of Al (Al/Pd) and i-a-SiGe:H interface using an additional very thin Sb layer. IEEE Electron. Lett. 38:2002;253-255.
-
(2002)
IEEE Electron. Lett.
, vol.38
, pp. 253-255
-
-
Lin, C.S.1
Yeh, R.H.2
Li, I.X.3
Hong, J.W.4
-
9
-
-
0024891246
-
Physical model for amorphous-silicon thin-film transistor and their implementation in a circuit simulation program
-
Hack M., Shur M.S., Shaw J.G. Physical model for amorphous-silicon thin-film transistor and their implementation in a circuit simulation program. IEEE Trans. Electron Dev. 36(12):1989;2753-2769.
-
(1989)
IEEE Trans. Electron Dev.
, vol.36
, Issue.12
, pp. 2753-2769
-
-
Hack, M.1
Shur, M.S.2
Shaw, J.G.3
|