Novel silicide nanopatterning method for the fabrication of ultra-short channel Schottky-tunneling MOSFETs

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 133-138

  Zhao, Q T ^a   Klinkhammer, F ^a   Dolle, M ^a   Kappius, L ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; EPITAXIAL GROWTH; GATES (TRANSISTOR); MOSFET DEVICES; NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMOOXIDATION;

COBALT DISILICIDE; NANOPATTERNING METHOD; SCHOTTKY CONTACTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033640067     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00273-7     Document Type: Article

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