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Volumn 15, Issue 8, 2003, Pages 1032-1034

Narrow-stripe distributed reflector lasers with first-order vertical grating and distributed Bragg reflectors

Author keywords

Distributed Bragg reflector (DBR); Distributed feedback (DFB) laser; Distributed reflector laser (DR); GaInAsP InP laser

Indexed keywords

BRAGG CELLS; DIFFRACTION GRATINGS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0041523922     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.815330     Document Type: Article
Times cited : (14)

References (15)
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  • 9
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    • 1.5 μm wavelength DBR lasers consisting of 3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene
    • M. M. Raj, J. Wiedmann, Y. Saka, H. Yasumoto, and S. Arai, "1.5 μm wavelength DBR lasers consisting of 3λ/4-semiconductor and 3λ/4-groove buried with benzocyclobutene," Electron. Lett., vol. 35, pp. 1335-1337, 1999.
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  • 10
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    • M. M. Raj, Y. Saka, J. Wiedmann, H. Yasumoto, and S. Arai, "Continuous wave operation of 1.55 μm GaInAsP/InP laser with semiconductor/benzocycobutene distributed Bragg reflector," Jpn. J. Appl. Phys., vol. 38, pp. L1240-L1242, 1999.
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    • M. M. Raj, J. Wiedmann, S. Toyoshima, Y. Saka, K. Ebihara, and S. Arai, "High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers," Jpn. J. Appl. Phys., vol. 40, pp. 2269-2277, 2001.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.