Super Junction LDMOST in silicon-on-sapphire technology (SJ-LDMOST)

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 81-84

  Nassif Khalil, Sameh G ^a   Salama, C Andre T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; POWER INTEGRATED CIRCUITS; SWITCHING;

ELECTRIC FIELD DISTRIBUTION;

SILICON ON SAPPHIRE TECHNOLOGY;

EID: 0036053765     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A new generation of high voltage MOSFETs breaks the limits line of silicon
2. Theory of a novel voltage sustaining layer for power devices
3. Theory of semiconductor super junction devices
4. Extension of RESURF principle to dielectrically isolated power devices
5. 1200 V high-side lateral MOSFET in junction-isolated power IC technology using two field reduction layers
6. Suppressing Al outdiffusion in implantation amorphized and recrystallized silicon on sapphire films