Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments

Nanotechnology

Volumn 14, Issue 7, 2003, Pages 772-777

  Lambert, M F ^a   Goffman, M F ^a   Bourgoin, J P ^a   Hesto, P ^b  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTROMIGRATION; ELECTRON TUNNELING; GOLD; LITHOGRAPHY; MOLECULES; NANOSTRUCTURED MATERIALS; WIRE;

FOWLER-NORDHEIM REGIME; GOLD WIRES; SINGLE CLUSTER;

ENERGY GAP;

EID: 0041494280     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/14/7/313     Document Type: Article

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