Crystalline oxide-based devices on silicon substrates

Journal of Electronic Materials

Volumn 32, Issue 8, 2003, Pages 868-871

  Eisenbeiser, K ^a   Droopad, R ^a   Yu, Z ^a   Overgaard, C ^a   Kulik, J ^a   Finder, J ^a   Smith, S M ^a   Voigt, S ^a   Penunuri, D ^a  

^a MOTOROLA INC   (United States)

Author keywords

Crystalline oxide; Ferroelectric; Piezoelectric; Silicon; Strontium titinate

Indexed keywords

ACOUSTIC SURFACE WAVE DEVICES; BAND STRUCTURE; CRYSTALLINE MATERIALS; DEPOSITION; EPITAXIAL GROWTH; FERROELECTRIC DEVICES; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PIEZOELECTRIC DEVICES; SOL-GELS; STRONTIUM COMPOUNDS; SUBSTRATES;

BAND ALIGNMENT; COUPLING COEFFICIENT; CRYSTALLINE OXIDE BASED DEVICES; DEPOLARIZATION FIELD; PSEUDO SUBSTRATE; RETENTION TIME; SOL-GEL DEPOSITION; STRONTIUM TITANATE;

SEMICONDUCTING SILICON;

EID: 0041439677     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0202-3     Document Type: Article

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