Pyroelectricity in gallium nitride thin films

Applied Physics Letters

Volumn 69, Issue 21, 1996, Pages 3254-3256

  Bykhovski, A D ^a,b   Kaminski, V V ^b   Shur, M S ^a,d   Chen, Q C ^c   Khan, M A ^c  

^a University of Virginia   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c APA Optronics   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000417741     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118027     Document Type: Article

References (10)

1. J. G. Gualieri, J. A. Kosinski, and A. Ballato, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 41, 53 (1994).
2. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, Appl. Phys. Lett. 68, 818 (1996).
3. Our preliminary results on the secondary pyroeffect in GaN in the temperature range from 20 to 80°C were presented at the 1996 MRS Spring Meeting; see A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, in 1996 MRS Spring Meeting, April 8-12, 1996, San-Francisco, CA, Book of Abstracts, p. 97.
4. M. Asif Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson, S. Krishnankutty, and R. M. Kolbas, Appl. Phys. Lett. 58, 526 (1991).
5. D. F. Nelson, Electric, Optic, and Acoustic Interactions in Dielectrics (Wiley, New York, 1979), pp. 244-246.
6. Y. Bayazitolu and M. N. Ozisik, Elements of Heat Transfer (McGraw-Hill, New York, 1988), pp. 18-22.
7. J. Fraden, AIP Handbook of Modern Sensors (AIP, New York, 1993), pp. 90-97.
8. A. Bykhovski, B. Gelmont, and M. Shur, Appl. Phys. Lett. 63, 2243 (1993); J. Appl. Phys. 74, 6734 (1993).
9. A. Bykhovski, B. Gelmont, and M. Shur, Appl. Phys. Lett. 63, 2243 (1993); J. Appl. Phys. 74, 6734 (1993).
10. L. D. Landau and E. M. Lifshitz, Fluid Mechanics (Pergamon, Oxford, 1959), p. 215.