Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 791-799

  Bosker G ^a   Stolwijk, N A ^a   Mehrer, H ^a   Sodervall U ^b   Jager W ^c  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; DOPING (ADDITIVES); SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS;

PENETRATION PROFILES; SPREADING RESISTANCE PROFILING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0041162966     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370806     Document Type: Article

References (26)

1. B. Tuck. Atomic Diffusion in III-V Semiconductors (Hilger, Bristol, 1988).
2. G. Bösker, N. A. Stolwijk, H.-G. Hettwer, A. Rucki, W. Jäger, and U. Södervall, Phys. Rev. B 52, 11927 (1995).
3. S. Yu, T. Y. Tan, and U. Gösele, J. Appl. Phys. 69, 3547 (1991).
4. S. M. Sze and J. C. Irvin, Solid-State Electron. 11, 599 (1968).
5. H.-G. Hettwer, W. Lerch, B. Lentfort, N. A. Stolwijk, and H. Mehrer, Appl. Surf. Sci. 50, 470 (1991).
6. J. R. Arthur, J. Phys. Chem. Solids 28, 2257 (1969).
7. D. J. Ashen, P. J. Dean, D. T. J. Hurle, J. B. Mullin, and A. M. White, J. Phys. Chem. Solids 36, 1041 (1975).
8. N. Moriya, I. Brener, R. Kalish, W. Pfeiffer, M. Deicher, R. Keller, R. Magerle, E. Recknaged, H. Skudlik, T. Wichert, H. Wolf, and ISOLDE collaboration, J. Appl. Phys. 73, 4248 (1993).
9. B. Goldstein, Phys. Rev. 121, 1305 (1961).
10. H. D. Palfrey, M. Brown, and A. F. W. Willoughby, J. Electrochem. Soc. 128, 2224 (1981).
11. L. Wang, L. Hsu, E. E. Haller, J. W. Erickson, A. Fischer, K. Eberl, and M. Cardona, Phys. Rev. Lett. 76, 2342 (1996).
12. T. Y. Tan, H. M. You, S. Yu, U. M. Gösele, W. Jäger, D. W. Boeringer, F. Zypman, R. Tsu, and S.-T. Lee, J. Appl. Phys. 72, 5206 (1992).
13. T. Y. Tan, U. Gösele, and S. Yu, Crit. Rev. Solid State Mater. Sci. 17, 47 (1991).
14. H. Bracht, E. E. Haller, K. Eberl, M. Cardona, and R. Clark-Phelps, Mater. Res. Soc. Symp. Proc. 527, 335 (1998).
15. H. Bracht, E. E. Haller, K. Eberl, and M. Cardona, Appl. Phys. Lett. 74, 49 (1999).
16. W. Jüngling, P. Pichler, S. Selberherr, E. Guerrero, and H. W. Pötzl, IEEE Trans. Electron Devices ED-32, 156 (1985).
17. G. A. Baraff and M. Schlüter, Phys. Rev. Lett. 55, 1327 (1985).
18. H. C. Casey, Jr., Atomic Diffusion in Semiconductors, edited by D. Shaw (Plenum, London, 1973), p. 155.
19. J. S. Blakemore, J. Appl. Phys. 53, 520 (1982).
20. G. Bösker, N. A. Stolwijk, H. Mehrer, and U. Södervall, in Proceedings of the Seventh International Conference on Shallow-Level Centers in Semiconductors, edited by C.A.J. Ammerlaan and B. Pajot (World Scientific, Singapore, 1997), p. 505.
21. G. Bösker, N. A. Stolwijk, U. Södervall, and W. Jäger, Defect Diffus. Forum 143-147, 1109 (1997).
22. T. Y. Tan, S. Yu, and U. Gösele, J. Appl. Phys. 70, 4823 (1991).
23. K. Muraki and Y. Horikoshi, Inst. Phys. Conf. Ser. 145, 547 (1995).
24. K. Muraki and Y. Horiboshi, J. Cryst. Growth 175, 162 (1997).
25. P. Mei, H. W. Yoon, T. Venkatesan, S. A. Schwarz, and J. B. Harbison, Appl. Phys. Lett. 50, 1823 (1987).
26. U. Gösele, T. Y. Tan, M. Schultz, U. Egger, P. Werner, R. Scholz, and O. Breitenstein, Defect Diffus. Forum 143-147, 1079 (1997).