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Volumn 175-176, Issue PART 1, 1997, Pages 162-167

Suppression of AlGaAs/GaAs superlattice intermixing by p-type doping

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; FERMI LEVEL; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY; TUNING;

EID: 0031143374     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00928-1     Document Type: Article
Times cited : (5)

References (15)
  • 6
    • 30244468338 scopus 로고    scopus 로고
    • note
    • The top GaAs layer was employed to avoid the influence of the surface depletion.
  • 7
    • 30244550161 scopus 로고    scopus 로고
    • note
    • We have also carried out self-consistent calculations to find that the effect of the band-bending on the PL energy is negligibly small.
  • 8
    • 30244532804 scopus 로고    scopus 로고
    • note
    • -3 for 800, 850, 900, and 950°C, respectively.
  • 9
    • 30244577667 scopus 로고    scopus 로고
    • note
    • In reality, the dependence is sublinear. This is partly because the carrier concentration is decreased by the thermal annealing. Typically, the carrier concentration of n-type samples dropped to half of the initial values.
  • 14
    • 0005649704 scopus 로고    scopus 로고
    • K. Muraki and Y. Horikoshi, in: Proc. 22nd Int. Symp. on Compound Semiconductors, Cheju, Korea (1995) (Inst. Phys. Conf. Ser. 145 (1996) 547).
    • (1996) Inst. Phys. Conf. Ser. , vol.145 , pp. 547


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.