Properties of Ga self-interstitials in GaAs investigated by in-diffusion of Cd

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 1109-1116

  Bosker G ^a   Stolwijk, N A ^a   Sodervall U ^b   Jager W ^c  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Arsenic vapour pressure; Cadmium diffusion; Doping dependence; Gallium arsenide; Kick out mechanism; Self diffusion; Self lnterstitials; SIMS; Spreading resistance profiling

Indexed keywords

CADMIUM; DIFFUSION IN LIQUIDS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SINGLE CRYSTALS;

CADMIUM DIFFUSION; DOPING DEPENDENCE; SELF-DIFFUSION; SELF-LNTERSTITIALS; SPREADING RESISTANCE PROFILING; VAPOUR PRESSURES;

GALLIUM;

EID: 0007729108     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.1109     Document Type: Article

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