Assessment of NSOM resolution on III-V semiconductor thin films

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Labardi, M ^a,b   Gucciardi, P G ^a,e   Allegrini, M ^a,c   Pelosi, C ^d  

^a UNIVERSITY OF PISA   (Italy)

^b SCUOLA NORMALE SUPERIORE   (Italy)

^c UNIVERSITY OF MESSINA   (Italy)

^d CNR   (Italy)

^e UNIVERSITY OF FLORENCE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; CONTRAST MECHANISM; DISCRIMINATION OF MATERIALS; GAAS; GAAS THIN FILMS; II-IV SEMICONDUCTORS; LATERAL RESOLUTION; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; OPTICAL NEAR FIELD; SEMICONDUCTOR THIN FILMS; TRANSMISSION MODE;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; LIGHT TRANSMISSION; ORGANOMETALLICS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM; THIN FILMS;

NEAR FIELD SCANNING OPTICAL MICROSCOPY;

EID: 0039849143     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051171     Document Type: Article

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