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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 6, 1998, Pages 3726-3729

Dissolution characteristics of chemically amplified 193 nm resists

(6) Itani, Toshiro a Yoshino, Hiroshi a Hashimoto, Shuichi a Yamana, Mitsuharu a Miyasaka, Mami a Tanabe, Hiroyoshi a

a NEC CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039811669 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.590502 Document Type: Article

Times cited : (7)

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