Monte Carlo simulation of silicon amorphization during ion implantation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 17, Issue 12, 1998, Pages 1236-1243

  Bohmayr, Walter ^a   Burenkov, Alexander ^a   Lorenz, Jürgen ^a   Ryssel, Heiner ^a   Selberherr, Siegfried ^a  

^a SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

Amorphization; Implant induced damage; Ion implantation; Ion radiation effects; Modeling; Monte Carlo methods

Indexed keywords

EID: 0039441031     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.736563     Document Type: Article

References (50)

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