A systematic analysis of defects in ion-implanted silicon

Applied Physics A Solids and Surfaces

Volumn 45, Issue 1, 1988, Pages 1-34

  Jones, K S ^a   Prussin, S ^a,b   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TRW Electronics Group ^*  (United States)

Author keywords

61.80; 81.40

Indexed keywords

HEAT TREATMENT - ANNEALING; PHYSICS - SOLID STATE; SEMICONDUCTOR MATERIALS - ION IMPLANTATION;

AMORPHOUS LAYER; ARSENIC IMPLANTS; CLASSIFICATION OF SEMICONDUCTOR DEFECTS; SEMICONDUCTOR ANNEALING DAMAGE;

SEMICONDUCTING SILICON;

EID: 0023860584     PISSN: 07217250     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF00618760     Document Type: Article

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