Growth of highly p-type doped GaAsSb:C for HBT application

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 575-578

  Neumann, S ^a   Prost, W ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; BIPOLAR TRANSISTORS; CRYSTAL LATTICES; DOPING (ADDITIVES); HETEROJUNCTIONS; HYDROGEN; INDIUM; INDIUM PHOSPHIDE; IONIZATION OF GASES; SEMICONDUCTING GALLIUM; SOLIDS; SUBSTRATES; TEMPERATURE;

LINEAR DOPING; NITROGEN CARRIER GAS;

SEMICONDUCTING GALLIUM COMPOUNDS; HETEROJUNCTION BIPOLAR TRANSISTORS;

100 GHZ; CARRIER GAS; DISTRIBUTION COEFFICIENT; DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTOR; GROWTH BEHAVIOR; HIGH SPEED; INP SUBSTRATES; LATTICE-MATCHED;

EID: 0038825056     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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