Stretch-out of high-permittivity MOS capacitance-voltage curves resulting from a lateral non-uniform oxide charge distribution

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 219-224

  Autran, J L ^a   Munteanu, D ^a   Dinescu, R ^a   Houssa, M ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITANCE; DIELECTRIC MATERIALS; DOPING (ADDITIVES); PERMITTIVITY;

CHARGE BONDING;

MOS CAPACITORS;

EID: 0038786819     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00205-9     Document Type: Conference Paper

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