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Volumn 42, Issue 6, 2003, Pages 808-813

Photoluminescence degradation in porous silicon upon annealing at high temperature in vacuum

Author keywords

Photoluminescence; Photoluminescence quenching; Porous silicon; X ray photoemission spectroscopy

Indexed keywords


EID: 0038780169     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (8)

References (34)
  • 2
    • 0000227182 scopus 로고    scopus 로고
    • Properties of porous silicon
    • edited by L. T. Canham (INSPEC, Institute of Electrical Engineers, London)
    • Properties of Porous Silicon, EMIS, Datareview Series No. 18, edited by L. T. Canham (INSPEC, Institute of Electrical Engineers, London, 1997).
    • (1997) EMIS, Datareview Series No. 18 , vol.18
  • 4
    • 0031359381 scopus 로고    scopus 로고
    • and references therein
    • W. Theiss, Surf. Sci. Rep. 29, 91 (1997) and references therein.
    • (1997) Surf. Sci. Rep. , vol.29 , pp. 91
    • Theiss, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.