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Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 179-182

Depth dependence of photoluminescence and chemical bonding in porous silicon

(5) Sendova Vassileva, M a Dimova Malinovska, D a Kamenova, M a Kakanakova Georgieva, A b Marinova, Ts b

a CTRL LAB SOLAR ENER NEW ENER S (Bulgaria)

b INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY (Bulgaria)

Author keywords

Chemical bonding; Oxidation states of silicon; Photoluminescence; Porous silicon; Raman spectra; XPS

Indexed keywords

EID: 0347247818 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(98)00092-1 Document Type: Article

Times cited : (3)

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