Electrode-barrier properties when using the Pt1-xIrx alloy and its oxide for high-density Pb(Zr, Ti)O3-based ferroelectric memories

Journal of the Korean Physical Society

Volumn 42, Issue 4, 2003, Pages 538-542

  Lee, Kyung Haeng ^a   Lee, Kwang Bae ^a   Desu, Seshu B ^b  

^a Sangji University   (South Korea)

^b University of Massachusetts   (United States)

Author keywords

Electrode barrier; Ferroelectroc thin film capacitor; PtIrOx; PZT

Indexed keywords

EID: 0038745768     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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