Improvement by surface modification of Ir electrode-barrier for Pb(Zr,Ti) O3 -based high-density nonvolatile ferroelectric memories

Current Applied Physics

Volumn 1, Issue 4-5, 2001, Pages 379-384

  Lee, Kwang Bae ^a   Desu, Seshu B ^b  

^a Sangji University   (South Korea)

^b UNIVERSITY OF MASSACHUSETTS   (United States)

Author keywords

77.84. s; Electrode barrier; Polarization fatigue free; PZT thin film capacitors; Surface modification of Ir

Indexed keywords

EID: 0038229285     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1567-1739(01)00039-6     Document Type: Article

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