Optimization of a Pt/IrO2/Ir electrode-barrier for Pb(Zr,Ti)O3-based high density ferroelectric memories

Journal of the Korean Physical Society

Volumn 36, Issue 5, 2000, Pages 299-303

  Lee, K B ^a   Song, Y ^b   Ryu, S O ^c  

^a Sangji University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034342635     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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