Novel high temperature multilayer electrode-barrier structure for high-density ferroelectric memories

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 719-721

  Bhatt, H D ^a   Desu, S B ^a   Vijay, D P ^a   Hwang, Y S ^a   Zhang, X ^a   Nagata, M ^a   Grill, A ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CRYSTAL MICROSTRUCTURE; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRODES; FERROELECTRICITY; LEAKAGE CURRENTS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS;

FERROELECTRIC CAPACITOR; MEMORY CELL; THIN FILM CAPACITOR;

THIN FILM DEVICES;

EID: 0031552815     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119840     Document Type: Article

References (9)