Encapsulated silver for integrated circuit metallization

Materials Science and Engineering R: Reports

Volumn 40, Issue 6, 2003, Pages 207-250

  Adams, Daniel ^a   Alford, T L ^b  

^a UNIVERSITY OF THE WESTERN CAPE   (South Africa)

^b AZ 85281   (United States)

Author keywords

Dielectrics; Electromigration; Encapsulation; Resistivity; Silver; Stress

Indexed keywords

AGGLOMERATION; COPPER; CORROSION; DIELECTRIC MATERIALS; ELECTROMIGRATION; ENCAPSULATION; INTEGRATED CIRCUIT MANUFACTURE; MULTILAYERS; SILVER; ULSI CIRCUITS;

MULTILAYER METALLIZATION (MLM);

METALLIZING;

EID: 0038694712     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(03)00025-1     Document Type: Review

References (84)

1. J.M.E. Harper, K.L. Holloway, T.Y. Kwok, US Patent No. 5,130,274 (1992).
2. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1994.
3. Li J., Mayer J.W., Shacham-Diamand Y., Colgan E.G. Appl. Phys. Lett. 60:1992;2983.
4. P.A. Totta, W.E. Mutter, unpublished work, 1968.
5. T. Iijima, H. Ono, N. Ninomiya, Y. Ushiku, T. Hatanaka, A. Nishiyama, H. Iwai, Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, p. 183.
6. Murarka S.P., Guttman R.J., Kaloyeros A.E., Lanford W.A. Thin Solid Films. 236:1993;257.
7. McBrayer J.D., Swanson R.M., Sigmon T.W. J. Electrochem. Soc. 133:1986;1243.
8. Graedel T.E. J. Electrochem. Soc. 139(7):1992;1963.
9. Chalmers B., King R., Shuttleworth R. Proc. R. Soc. A. 193:1948;465.
10. Presland A.E.B., Price G.L., Trimm D.L. Prog. Surf. Sci. 3:1973;63.
11. Sharma S.K., Spitz J. Thin Solid Films. 65:1980;339.
12. Sharma S.K., Spitz J. Thin Solid Films. 66:1980;L51.
13. P.N. Nguyen, Ph.D. thesis, Arizona State University, 2000.
14. Willemsen M.E.C., Kuiper A.E.T., Reader A.H., Hokke R., Barbour J.C. J. Vac. Sci. Technol. B6:1988;53.
15. Wang S.Q., Raaijmakers I., Burrow B.J., Suthar S., Kim K.B. J. Appl. Phys. 68:1990;5176.
16. Alford T.L., Adams D., Laursen T., Ullrich B.M. Appl. Phys. Lett. 68:1996;3251.
17. Zou Y.L., Alford T.L., Adams D., Laursen T., Tu K.N., Morton R., Lau S.S. MRS Proc. 427:1996;355.
18. Li J., Mayer J.W., Colgan E.G. J. Appl. Phys. 70:1991;2820.
19. Adams D., Laursen T., Alford T.L., Mayer J.W. Thin Solid Films. 308:1997;450.
20. Doolittle L.R. Nucl. Instrum. Methods Phys. Res. B9:1985;344.
21. Adams D., Alford T.L., Theodore N.D., Russell S.W., Spreitzer R.L., Mayer J.W. Thin Solid Films. 262:1995;199.
22. Zou Y.L., Alford T.L., Zeng Y., Deng F., Lau S.S., Laursen T., Amali A., Ullrich B.M. J. Appl. Phys. 82(7):1997;3321.
23. Ting C.Y., Wittmer M., Lyer S.S., Brodsky S.B. J. Electrochem. Soc. 131:1984;2934.
24. Zeng Y., Chen L., Zou Y.L., Nguyen P.A., Hensen J.D., Alford T.L. Mater. Chem. Phys. 22:2000;77-82.
25. Y. Zeng, Ph.D. dissertation, Arizona State University, 1999.
26. O. Madelung (Ed.), Landolt-Bornstein, New Series 111-126, Springer, Berlin, 1990, p. 136.
27. Okamoto T., Shimizu M., Ohsaki A., Mashiko Y., Tsukamoto K., Matsukawa T., Nagao S. J. Appl. Phys. 62(11):1987;4465.
28. Russell S.W., Strane J.W., Mayer J.W., Wang S.Q. J. Appl. Phys. 76(1):1994;257.
29. J.A. Leavitt, L.C. McIntyre, M.R. Weller, in: J.R. Tesmer, M. Nastasi, J.C. Barbour, C.J. Maggiore, J.W. Mayer (Eds.), Handbook of Modern Ion Beam Materials Analysis, Materials Research Society, Pittsburgh, 1995, p. 40.
30. M. Ohring, The Materials Science of Thin Films, Academic, New York, 1992 (Chapter 8).
31. Deal B.E., Grove A.S. J. Appl. Phys. 36:1965;3770.
32. A.S. Grove, Physics and Technology of Semiconductor Devices, Wiley, New York, 1967 (Chapter 2).
33. N.A. Gjostein, Diffusion, American Society for Metals, Metals Park, OH, 1973.
34. Wang Y., Alford T.L. Appl. Phys. Lett. 74(1):1999;32.
35. J.A. Dean (Ed.), Lange's Handbook of Chemistry, vol. 14, 11th ed., McGraw-Hill, New York, 1992, pp. 6-69.
36. Y. Wang, Ph.D. dissertation, Arizona State University, 2001.
37. Wang Y., Alford T.L., Mayer J.W. J. Appl. Phys. 86(10):1999;5410.
38. J. Crank, The Mathematics of Diffusion, second ed., Clarendon, Oxford, 1975, p. 60.
39. Marecal N., Quesnel E., Pauleau Y. Thin Solid Films. 241:1994;34.
40. T.B. Maisalski (Ed.), Binary Alloy Phase Diagrams, American Society for Metals, Metals Park, OH, 1986.
41. C. Kittel, Introduction to Solid State Physics, fifth ed., Wiley, New York, 1976, p. 71.
42. K. Schröder (Ed.), CRC Handbook of Electrical Resistivities of Binary Metallic Alloys, CRC Press, Boca Raton, FL, 1983, p. 25.
43. Malgas G.F., Adams D., Nguyen P., Wang Y., Alford T.L., Mayer J.W. J. Appl. Phys. 90(11):2001;5594.
44. D. Adams, B.A. J., J.W. Mayer, T.L. Alford, Thin Solid Films 332 (1998) 237.
45. D. Adams, Ph.D. dissertation, Arizona State University, 1996.
46. Zeng Y., Zou Y.L., Alford T.L., Deng F., Lau S.S., Laursen T., Manfred Ullrich B. J. Appl. Phys. 81:1997;7773.
47. Zeng Y., Zou Y.L., Alford T.L. Thin Solid Films. 20:1997;89.
48. Zeng Y., Alford T.L., Zou Y.L., Amali A., Ullrich B.M., Deng F., Lau S.S. J. Appl. Phys. 83(2):1998;780.
49. Knorr D.B., Lu T.M. Appl. Phys. Lett. 54:1989;2210.
50. Jetter L.K., McHargue C.J., Williams R.O. J. Appl. Phys. 27:1956;368.
51. B.D. Cullity, Elements of X-ray Diffraction, Addison-Wesley, Reading, 1978.
52. Rollett A.D., Srolovitz D.J., Anderson M.P. Acta Metall. 37:1989;1227.
53. I.C. Noyan, J.B. Cohen, Residual Stress: Measurement by Diffraction and Interpretation, Springer, New York, 1987.
54. Vinci R.P., Zielinski E.M., Bravman J.C. Thin Solid Films. 262:1992;142.
55. Shibata H., Murota M., Hashimoto K. Jpn. J. Appl. Phys. 32:1993;4479.
56. Tsukada M., Ohfuji S. J. Vac. Sci. Technol. B. 11:1993;326.
57. Bacon R., Smith C.S. Acta Metall. 4:1956;337.
58. D'Heurle F.M., Harper J.M.E. Thin Solid Films. 171:1989;81.
59. Nix W.D. Met. Trans. A. 20:1989;2217.
60. Nguyen P., Zeng Y., Alford T.L. J. Vac. Sci. Technol. B. 17:1999;2204.
61. Nguyen P., Zeng Y., Alford T.L. J. Vac. Sci. Technol. B. 19(1):2001;161.
62. Y.L. Zou, Ph.D. dissertation, Arizona State University, 1998.
63. de Rooij A. Eur. Space Agency. 13:1989;363.
64. Bhan M.K., Nag P.K., Miller G.P., Gregory J.C. J. Vac. Sci. Technol. A. 12:1994;699.
65. C.H. Chou, J. Philips, J. Vac. Sci. Technol. A (1991) 2727.
66. Muller C.O. Corrosion (Houston). 47:1991;146.
67. Rice D.W., Peterson P., Rigby E.B., Phipps P.B.P., Capell R.J., Tremoureux R. J. Electrochem. Soc. 128:1981;275.
68. L.C. Feldman, J.W. Mayer, Fundamentals of Surface and Thin Film Analysis, North-Holland, New York, 1986.
69. D.R. Lide (Ed.), CRC Handbook of Chemistry and Physics, 72nd ed., Chemical Rubber, Cleveland, OH, 1991.
70. D.M. Manos, D.L. Flamm, Plasma Etching: An Introduction, Academic, Cambridge, 1989.
71. M.A. Lieberman, A.J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, Wiley, New York, 1994.
72. Gadre K.S., Alford T.L. J. Vac. Sci. Technol. B. 18(6):2000;2814.
73. Russell S.W., Rafalski S.A., Spreitzer R.L., Li J., Moinpour M., Moghadam F., Alford T.L. Thin Solid Films. 262:1995;154.
74. Niegisch W.D. J. Appl. Phys. 37:1966;4041.
75. G.R. Moore, D.E. Kline, Properties and Processing of Polymers for Engineers, Prentice-Hall, New York, 1984, p. 9.
76. Yang G.R., Dabral S., You L., McDonald J.F., Lu T.M., Bakhru H. J. Electron. Mater. 20:1991;571.
77. K.S. Gadre, Ph.D. dissertation, Arizona State University, 2002.
78. Mahadevan M., Bradley R.M., Bebierre J.M. Europhys. Lett. 45:1999;680.
79. Ho P.S., Huntington H.B. J. Phys. Chem. Solids. 307:1966;1319.
80. Patil H.R., Huntington H.B. J. Phys. Chem. Solids. 31:1970;463.
81. Klotsman S.M., Timofeyev A.N., Trakhtenberg I.S. Phys. Metal Metallogr. 14:1962;140.
82. Breitling H.M., Hummel R.E. J. Phys. Chem. Solids. 33:1972;845.
83. Hummel R.E., Geier H.J. Thin Solid Films. 25:1975;335.
84. Zeng Y., Chen L.H., Zou Y.L., Nguyen P.A., Hensen J.D., Alford T.L. Mater. Lett. 45:2000;157-161.