Impurity gettering in damaged regions of Si produced by high energy ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 679-681

  Koegler, R ^a   Panknin, D ^a   Skorupa, W ^a   Werner, P ^a   Danilin, A ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COPPER; ION IMPLANTATION; IRON; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

IMPURITY GETTERING; RAPID THERMAL ANNEALING (RTA); SPREADING RESISTANCE PROFILING (SRP);

SILICON WAFERS;

EID: 0030349375     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)