Boron penetration through gate oxide from decaborane gate electrode implantation

Electronics Letters

Volumn 39, Issue 10, 2003, Pages 807-808

  Bourdelle, K K ^a   Agarwal, A ^b   Perel, A S ^b  

^a AGERE SYSTEMS   (United States)

^b AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIFFUSION; ELECTRODES; HYDROGEN; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA;

GATE ELECTRODE; GATE OXIDE;

MOSFET DEVICES;

EID: 0038687287     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030521     Document Type: Article

References (6)

1. + polysilicon gated PMOS devices', IEEE Trans. Electron Devices, 1990, 37, (8), pp. 1842-1851
2. + gate devices', IEDM Tech. Dig., 1989, pp. 447-450
3. 2 source/drain extension implants on performance of PMOS transistors with thin gate oxides', IEEE Electron Device Lett., 2001, 22, (6), pp. 284-286
4. Fair, R.B.: 'Physical models of boron diffusion in ultrathin gate oxides', J. Electrochem. Soc., 1997, 144, (2), pp. 708-717
5. 2 chemical vapor deposition', Jpn. J. Appl. Phys., 1999, 38, (4B), pp. 2381-2384 (Pt. 1)
6. 14) ion implantation technology for sub-0.1-μm PMOSFET's', IEEE Trans. Electron Devices, 1999, 46, (4), pp. 683-689