Hydrogen-enhanced boron penetration in PMOS devices during SiO2 chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2381-2384

  Aoyama, Takayuki ^a   Suzuki, Kunihiro ^a   Tashiro, Hiroko ^a   Tada, Yoko ^a   Kataoka, Yuji ^a   Arimoto, Hiroshi ^a   Horiuchi, Kei ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Boron; Chemical vapor deposition; Diffusion; Hydrogen; MOS; Oxynitride; SiO2

Indexed keywords

EID: 0001659393     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2381     Document Type: Article

References (12)

1. T. Aoyama, K. Suzuki, H. Tashiro, Y. Toda, T. Yamazaki, Y. Arimoto and T. Ito: J. Electrochem. Soc. 140 (1993) 3624.
2. T. Aoyama, K. Suzuki, H. Tashiro, Y. Tada, T. Yamazaki, K. Takasaki and T. Ito: J. Appl. Phys. 77 (1995) 417.
3. T. Aoyama, K. Suzuki, H. Tashiro, Y. Tada and K. Horiuch: J. Electrochem. Soc. 145 (1998) 689.
4. T. Aoyama, S. Ohkubo, H. Tashiro, Y. Tada, K. Suzuki and K. Horiuchi: Jpn. J. Appl. Phys. 37 (1998) 1244.
5. A. S. Grove, O. Leistiko, Jr. and C. T. Sah: J. Appl. Phys. 35 (1964) 2695.
6. Y. Shacham-Diamand and W. G. Oldham: J. Electron. Mater. 15 (1986) 229.
7. R. B. Fair: J. Electrochem. Soc. 144 (1997) 708.
8. W. Kem: RCA Rev. (1970) 207.
9. W. Kem: J. Electrochem. Soc. 137 (1990) 1887.
10. M. E. Law, C. S. Rafferty and R. W. Dutton: SUPREM-IV Users Manual, Stanford Electronics Laboratories Technical Reports (Stanford University, 1988).
11. S. Satoh, H. Oka and N. Nakayama: Fujitsu Sci. & and Tech. J. 24 (1988) 456.
12. S. M. Sze: VLSI Technology (McGRAW-HILL, New York, 1988) Chapter 6.