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Volumn 22, Issue 6, 2001, Pages 284-286

The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides

Author keywords

Boron penetration; Fluorine; PMOS transistors; Source drain extension

Indexed keywords

BORON COMPOUNDS; COMPUTER SIMULATION; FABRICATION; FLUORINE; GATES (TRANSISTOR); POLYSILICON; SUBSTRATES; THRESHOLD VOLTAGE;

EID: 0035362377     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.924843     Document Type: Article
Times cited : (7)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.