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Volumn 22, Issue 6, 2001, Pages 284-286
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The effect of fluorine from BF2 source/drain extension implants on performance of PMOS transistors with thin gate oxides
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Author keywords
Boron penetration; Fluorine; PMOS transistors; Source drain extension
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Indexed keywords
BORON COMPOUNDS;
COMPUTER SIMULATION;
FABRICATION;
FLUORINE;
GATES (TRANSISTOR);
POLYSILICON;
SUBSTRATES;
THRESHOLD VOLTAGE;
THIN GATE OXIDES;
MOSFET DEVICES;
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EID: 0035362377
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/55.924843 Document Type: Article |
Times cited : (7)
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References (12)
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