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Volumn 37, Issue 2 SUPPL. B, 1998, Pages

Transmission electron microscope observation of grown-in defects detected by bright-field infrared-laser interferometer in Czochralski silicon crystals

Author keywords

Bright field infrared laser interferometer; Cavity; Czochralski silicon; Grown in defect; Transmission electron microscopy

Indexed keywords

CRYSTAL DEFECTS; INTERFEROMETRY; LASER APPLICATIONS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0031997606     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.L196     Document Type: Article
Times cited : (7)

References (12)
  • 10
    • 0030647711 scopus 로고    scopus 로고
    • eds. J. Michel, T. Kennedy, K. Wada and K. Thonke Materials Research Society, Pittsburgh, PA
    • K. Nakai, M. Hasebe, T. Iwasaki and Y. Tsumori: Defects in Electronic Materials II, eds. J. Michel, T. Kennedy, K. Wada and K. Thonke (Materials Research Society, Pittsburgh, PA, 1997) p. 113.
    • (1997) Defects in Electronic Materials II , pp. 113
    • Nakai, K.1    Hasebe, M.2    Iwasaki, T.3    Tsumori, Y.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.