Strategies toward sub-0.25 μ lithography

Optics and Photonics News

Volumn 8, Issue 3, 1997, Pages 23-27

  Smith, Bruce W ^a  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038576827     PISSN: 10476938     EISSN: None     Source Type: Trade Journal    
DOI: 10.1364/OPN.8.3.000023     Document Type: Article

References (16)

1. C. A. Mack, "Trends in optical lithography," Opt. and Phot. News 7 (4), 29-33 (1996).
2. R. Schenker et al., "Material limitations to 193-nm lithographic lifetimes," SPIE 2726, 698-720 (1996).
3. S. Katagiri et al., "Optical system for high-throughput EUV lithography," SPIE 2723, 34-45 (1996).
4. D. A. Tichenor et al., "Recent results in the development of an integrated EUVL laboratory tool," SPIE 2437, 292-307 (1995).
5. W. Finkelstein, "Ion beam lithography - a paradigm shift," Semicond. Intl. 18 (5), 55-58 (1995).
6. W. DeVore and S. Berger, "High emittance electron gun from projection lithography," J. Vac. Sci. Tech. B 14 (6), 3764-3769 (1996).
7. M. D. Levenson, "Welcome to the DUV revolution," Solid State Technol. 38 (9), 81-88 (1995).
8. S. Asai et al., "High performance optical lithography using a separated light source," J. Vac. Sci. Tech. B 10 (6), 3023-3026 (1992).
9. T. Ogawa et al., "The effective light source optimization with a modified beam for depth of focus enhancements," SPIE 2197, 19-30 (1994).
10. M. D. Levenson, "Wavefront engineering for photolithography," Phys. Today 46, 28-36 (1993).
11. Y. Ku et al., "Use of a pi-phase shifting x-ray mask to increase the intensity slope at feature edges," J. Vac. Sci. Tech. B 6 (1), 150-153 (1988).
12. R. Kostelak et al., Proc. of the OCG Interface Conference, 125 (1993).
13. B. W. Smith and S. Turget, "Phase-shift mask issues for 193 nm lithography," SPIE 2197, 201-210 (1994).
14. B. W. Smith et al., "Attenuated phase shift mask materials for 248 and 193 nm lithography," J. Vac. Sci. Tech. B 14 (6) 3719-3723 (1996).
15. Y. Liu and A. Zakhor, IEEE Trans. Semicond. Mfg. 5, 138 (1992).
16. B. W. Smith, "Aberration tolerancing for 193 nm lithography," First International Symposium on 193 nm Lithography, (1995).