Material limitations to 193-nm lithographic system lifetimes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2726, Issue , 1996, Pages 698-706

  Schenker, Richard ^a   Piao, F ^a   Oldham, W G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

193 nm; Color center; Compaction; Damage; Fused silica; Lithography; Stress birefringence; Two photon

Indexed keywords

BIREFRINGENCE; COMPACTION; EXCIMER LASERS; FUSED SILICA; IRRADIATION;

STRESS-BIREFRINGENCE;

PHOTOLITHOGRAPHY;

EID: 0030314785     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240935     Document Type: Conference Paper

References (15)

1. Effects of excimer laser irradiation on the transmission, index of refraction, and density of ultraviolet grade fused silica
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3. Excimer laser damage testing of optical materials
4. 248 nm lens materials: Performance and durability issues in an industrial environment
5. Sudden onset of strong absorption followed by forced recovery in KrF laser-irradiated fused silica
6. 2
7. Deep-UV damage to fused silica
8. Ultraviolet damage properties of various fused silica materials
9. Nature of defects and defect generation in optical glasses
10. Optical properties and structure of defects in silica glass
11. Degradation of fused silica at 193 nm and 213 nm
12. Photoelastic constants of vitreous silica and its elastic coefficient of refractive index
13. Volume, index-of-refraction, and stress changes in electron-irradiated vitreous silica