Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 2987-2989

  Macdonald, D H ^a   Maeckel, H ^a   Doshi, S ^a   Brendle, W ^a   Cuevas, A ^a   Williams, J S ^a   Conway, M J ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; TRANSMISSION ELECTRON MICROSCOPY;

RESIDUAL DEFECTS;

SILICON;

EID: 0038528468     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572469     Document Type: Article

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