Formation of micrometer sized crater shaped pits in silicon by low-energy 22Ne+ implantation and electron beam annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 179-183

  Markwitz, A ^a,b   Kennedy, V J ^a   Baumann, H ^c  

^a GNS SCIENCE   (New Zealand)

^b VICTORIA UNIVERSITY OF WELLINGTON   (New Zealand)

^c GOETHE UNIVERSITY   (Germany)

Author keywords

Electron beam annealing; Isotopic depth profiling; Neon implantation; Silicon nanostructuring; Surface modification; Surface near implantation

Indexed keywords

ANNEALING; ELECTRON BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NEON; SILICON WAFERS; SURFACE STRUCTURE; SURFACE TREATMENT; VACUUM APPLICATIONS;

ISOTOPIC DEPTH PROFILING; SILICON NANOSTRUCTURING;

HIGH ENERGY PHYSICS;

EID: 0038485553     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00719-5     Document Type: Conference Paper

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