Nitrogen Depth Distribution, Interface and Structure Analysis of SiNx Layers Produced by Low-Energy Ion Implantation

Mikrochimica Acta

Volumn 125, Issue 1, 1997, Pages 337-341

  Markwitz, Andreas ^a   Baumann, Horst ^a   Michelmann, Rolf W ^a   Meyer, Jörg D ^a   Krimmel, Eberhard F ^a   Bethge, Klaus ^a  

^a GOETHE UNIVERSITY   (Germany)

Author keywords

Ion implantation; Nitrogen depth profile; Resonant nuclear reaction analysis; Silicon nitride layers; TEM analysis

Indexed keywords

EID: 0002947513     PISSN: 00263672     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf01246208     Document Type: Article

References (22)

1. Gmelin Handbook of Inorganic and Organometallic Chemistry "Si"; Supplement B 5C, Silicon Nitride in Microelectronics (in co-operation with E. F. Krimmel), Springer, Berlin Heidelberg New York Tokyo, 1991.
2. J. Mort, E. Jansen, Plasma Deposited Thin Films CRC, Boca Raton, 1986.
3. A. Markwitz, H. Baumann, W. Grill, E. F. Krimmel, K. Bethge, Appl. Phys. Lett. 1994, 64, 2652.
4. A. Markwitz, H. Baumann, P. Misaelides, E. F. Krimmel, K. Bethge, Fresenius. J. Anal. Chem. 1993, 346, 177.
5. A. Markwitz, H. Baumann, E. F. Krimmel, R. W. Michelmann, C. Maurer, E. C. Paloura, A. Knop, K. Bethge, Appl. Phys. 1994, A59, 435.
6. A. Markwitz, H. Baumann, W. Grill, B. Heinz, A. Röseler, E. F. Krimmel, K. Bethge, Fresenius J. Anal. Chemistry 1995, 353, 734.
7. R. W. Michelmann, H. Baumann, A. Markwitz, J. D. Meyer, A. Röseler, E. F. Krimmel, K. Bethge, Fresenius J. Anal. Chem. 1995, 353, 403.
8. A. Markwitz, H. Baumann, W. Grill, A. Knop, E. F. Krimmel, K. Bethge, Nucl. Instr. Methods 1994, B89, 362.
9. A. Markwitz, R. W. Michelmann, H. Baumann, J. D. Meyer, E. F. Krimmel, K. Bethge, Mikrochim. Acta 1997, 125, 313.
10. C. Maurer, R. Kallweit, H. Baumann, E. F. Krimmel, K. Bethge, Nucl. Instr. Methods 1993, B80/81, 564.
11. A. Markwitz, H. Baumann, M. Rose, S. Logothetidis, P. Misaelides, E. F. Krimmel, K. Bethge, Vacuum 1993, 44, 367.
12. W. Theodossiu, H. Baumann, A. Markwitz, K. Bethge, Fresenius J. Anal. Chem. 1995, 353, 483.
13. K. Bethge, Nucl. Inst. Methods 1992, B66, 146.
14. M. Rose, H. Baumann, A. Markwitz, K. Bethge, Nucl. Instr. Methods 1993, B80/81, 459.
15. A, Mader, J. D. Meyer, K. Bethge, Nucl. Instr. Methods 1992, B71, 65.
16. W. K. Chu, J. W. Mayer, M. A. Nicolet, Backscattering Spectrometry, Academic Press, 1978.
17. L. Feldman, J. W. Mayer, S. T. Picraux, Materials Analysis by Ion Channeling, Academic Press, 1982.
18. L. R. Doolittle, Proc. High Energy and Heavy Ion Beams in Mat. Analyses (J. R. Tesmer et al., eds.), MRS, 1990, p. 175.
19. A. Markwitz, S. Klein, R. W. Michelmann, H. Baumann, E. F. Krimmel, K. Bethge, Nucl. Instr. Methods 1996, B112, 284.
20. J. P. Biersack, W. Eckstein, Comput. Phys. Comm. 1984, A34, 73.
21. K. J. Reeson, Vaccum 1986, 36, 891.
22. R. Tromp, G. W. Rubloff, P. Balk, F. K. LeGoues, E. J. Loenen, Phys. Rev. Lett. 1985, 55, 2332.